IRFB4410 |
RFQ for IRFB4410 Required Field |
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| Technical/Catalog Information | IRFB4410PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 96A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 58A, 10V |
| Input Capacitance (Ciss) @ Vds | 5150pF @ 50V |
| Power - Max | 250W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFB4410PBF IRFB4410PBF |
| Product | Manufacturers | Pack | D/C |
| IRFB4410 | - | TO-220 | 05+ |
Typical Application |
| High Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switched and High Frequency Circuits |
| Symbol | Parameter | MAX | Units |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 96 | A |
| ID @ TC =100°C | Continuous Drain Current, VGS @ 10V | 68 | |
| IDM | Pulsed Drain Current | 380 | |
| PD @TC = 25°C | Maximum Power Dissipation | 250 | W |
| Linear Derating Factor | 1.6 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| dv/dt | Peak Diode Recovery | 19 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw | 10lb in (1.1N m) |
